IRF3205 N-Channel HEXFET Power MOSFET

The IRF3205 from International Rectifier is a robust N-channel HEXFET power MOSFET in a TO-220AB package, designed for high efficiency and reliability across a wide range of applications. It boasts extremely low on-resistance per silicon area, a dynamic dv/dt rating, and fast switching capabilities.

Key Features & Specifications:

• Transistor Type: N-Channel
• Package Type: TO-220
• Drain-to-Source Voltage (Vds): 55V (Max)
• Gate-to-Source Voltage (Vgs): 20V (Max)
• Continuous Drain Current (Id): 110A at Vgs 10V, 25C (Max)
• Pulsed Drain Current (Idm): 390A (Max)
• On-Resistance (Rds(on)): 8m at Vgs 10V
• Power Dissipation (Pd): 200W (Max)
• Minimum Gate Threshold Voltage (Vgs(th)): 2V to 4V (Required to conduct)
• Operating & Storage Junction Temperature: -55C to 175C

Applications:

• Power Management Systems
• Industrial Applications
• Portable Devices
• Consumer Electronics
• Battery Chargers and Battery Management Systems
• Fast Switching Applications (e.g., UPS, Battery Backup systems)
• Solar-related Applications
• Uninterruptible Power Supplies
• Motor Drivers
• High Power Audio Amplifiers

Replacement and Equivalent MOSFETs:

• IRFB3206
• IRFB3256
• IRFB3307
• IRFB7540

Safe Operating Practices:

To ensure long-term performance and reliability, it is recommended to operate the IRF3205 at least 20% below its maximum ratings. For example:

• Do not exceed a load voltage of 44V DC.
• Do not drive a continuous load of more than 88A.
• Use a proper heatsink with the transistor.
• Store and operate the device within the temperature range of -55C to 175C.

Official Datasheet:

• Infineon IRFI3205PbF Datasheet (Similar to IRF3205)

Additional Resources:

• Components101 – IRF3205 Pinout, Datasheet, Features & Alternatives
• JAK Electronics – IRF3205 MOSFET: Datasheet, Features, Equivalent
• WatElectronics.com – IRF3205 MOSFET : Datasheet, Working & Its Applications

Package Includes:

• 1 x IRF3205 MOSFET