IRFP 150 N MFET Features

• Drain to Source Voltage (VDS) : 100 V
• Drain to Gate Voltage (RGS = 20k) (VDGR) : 100 V
• Continuous Drain Current (ID) : 44 A
• TC = 100oC : 12 A
• Pulsed Drain Current (IDM) : 4A
• Gate to Source Voltage (VGS) : 20 V
• Maximum Power Dissipation (PD) 155 W
• Linear Derating Factor : 1.03 W/Degree C
• Pulse Avalanche Rating : 6 , 14 , 15
• Operating and Storage Temperature (TJ, TSTG) : -55 to 150 Degree C

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