Key Features

• PNP Bipolar Junction Transistor (BJT) for reliable signal control
• High current gain (hFE: 110800) for efficient amplification
• Collector current up to 100mA suitable for low-power circuits
• Low voltage operation (up to 4565V) for safe, stable performance
• Compact TO-92 package for easy PCB mounting

Technical Specifications

• Transistor Type: PNP
• Maximum Collector Current (Ic): 100mA
• Collector-Emitter Voltage (Vce): up to 45V65V
• Power Dissipation: 500mW
• Transition Frequency: ~150MHz
• Package: TO-92